发明名称 |
Electro-optical nanocrystal memory device |
摘要 |
A memory device. The memory device includes a substrate and an array of nanocrystals formed proximate to the substrate. The array of nanocrystals is electrically insulated to hold charge carriers therein. A presence of charge carriers within the array of nanocrystals represents a first logic state of the memory device. An absence of the charge carriers within the array of nanocrystals represents a second logic state of the memory device. The presence and the absence of the charge carriers is determinable via directing a beam of photons onto the array of nanocrystals and sensing an optical response.
|
申请公布号 |
US2003230629(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20030465354 |
申请日期 |
2003.06.18 |
申请人 |
BOURIANOFF GEORGE I.;LINDSTEDT ROBERT;ATWATER HARRY A.;GIORGI MARIA;WALTERS ROBERT J.;CASPERSON JULIE D.;KIK PIETER G. |
发明人 |
BOURIANOFF GEORGE I.;LINDSTEDT ROBERT;ATWATER HARRY A.;GIORGI MARIA;WALTERS ROBERT J.;CASPERSON JULIE D.;KIK PIETER G. |
分类号 |
G11C11/21;G11C11/22;G11C13/04;(IPC1-7):G06K7/10;G06K7/14;G06K19/06 |
主分类号 |
G11C11/21 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|