发明名称 Electro-optical nanocrystal memory device
摘要 A memory device. The memory device includes a substrate and an array of nanocrystals formed proximate to the substrate. The array of nanocrystals is electrically insulated to hold charge carriers therein. A presence of charge carriers within the array of nanocrystals represents a first logic state of the memory device. An absence of the charge carriers within the array of nanocrystals represents a second logic state of the memory device. The presence and the absence of the charge carriers is determinable via directing a beam of photons onto the array of nanocrystals and sensing an optical response.
申请公布号 US2003230629(A1) 申请公布日期 2003.12.18
申请号 US20030465354 申请日期 2003.06.18
申请人 BOURIANOFF GEORGE I.;LINDSTEDT ROBERT;ATWATER HARRY A.;GIORGI MARIA;WALTERS ROBERT J.;CASPERSON JULIE D.;KIK PIETER G. 发明人 BOURIANOFF GEORGE I.;LINDSTEDT ROBERT;ATWATER HARRY A.;GIORGI MARIA;WALTERS ROBERT J.;CASPERSON JULIE D.;KIK PIETER G.
分类号 G11C11/21;G11C11/22;G11C13/04;(IPC1-7):G06K7/10;G06K7/14;G06K19/06 主分类号 G11C11/21
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