| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of securing the etching margin for forming a silicon spacer by depositing a barrier layer having a higher etching selectivity than that of a silicon layer after depositing the silicon layer for forming a gate electrode. CONSTITUTION: After forming an isolation layer(112) at a semiconductor substrate(110), a gate oxide layer(114), the first silicon layer(116), and a barrier layer(118) having a higher etching selectivity than that of the first silicon layer are sequentially formed at the upper portion of the semiconductor substrate. A gate electrode(120) is then formed by patterning the barrier layer, the first silicon layer, and the gate oxide layer. The second silicon layer(122) is deposited on the entire surface of the resultant structure. A silicon spacer is formed at both sidewalls of the gate electrode by carrying out a predetermined etching process. Then, the barrier layer is completely removed.
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