发明名称 |
Method of forming metal fuses in CMOS processes with copper interconnect |
摘要 |
The present invention provides a method of forming a semiconductor device fuse and a semiconductor device fuse structure. A first dielectric layer is formed on top of a metal layer in a semiconductor device. The dielectric layer is patterned to provide access to at least two contacts in the metal layer. A conductive metal layer is deposited and patterned to form a fuse between the fuse contacts. A second dielectric layer is deposited on the conductive metal layer.
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申请公布号 |
US6664141(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010991187 |
申请日期 |
2001.11.14 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
CASTAGNETTI RUGGERO;TRIPATHI PRABHAKAR PATI;VENKATRAMAN RAMNATH |
分类号 |
H01L21/84;H01L23/525;H01L27/12;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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