发明名称 |
Semiconductor memory device for decreasing a coupling capacitance |
摘要 |
The semiconductor memory device of the present invention comprises: memory cells arranged in a matrix; word lines extending in a row direction; bit line pairs extending in a column direction; exchange blocks for exchanging the bit lines of the different neighboring bit line pairs.
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申请公布号 |
US6665204(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010772964 |
申请日期 |
2001.01.31 |
申请人 |
NEC CORPORATION |
发明人 |
TAKEDA KOICHI |
分类号 |
G11C11/41;G11C7/18;G11C11/419;H01L21/8242;H01L23/522;H01L27/10;H01L27/11;(IPC1-7):G11C5/06 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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