发明名称 |
Vapor drying for cleaning photoresists |
摘要 |
One aspect of the present invention relates to a method of cleaning a patterned photoresist clad structure involving the steps of contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 4 to about 8 carbon atoms; condensing the alcohol vapor on the patterned photoresist clad structure; and removing the condensed alcohol vapor from the patterned photoresist clad structure. Another aspect of the present invention involves the use of an alcohol vapor having a boiling point from about 102° C. to about 175° C. Yet another aspect of the present invention involves the use of an alcohol vapor having a flash point from about 15° C. to about 80° C.
|
申请公布号 |
US6663723(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010974276 |
申请日期 |
2001.10.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TEMPLETON MICHAEL K.;SUBRAMANIAN RAMKUMAR;PHAN KHOI A.;RANGARAJAN BHARATH |
分类号 |
B08B7/00;G03F7/40;(IPC1-7):B08B5/00 |
主分类号 |
B08B7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|