| 摘要 |
This invention provides a new configuration and manufacturing method of the hetero-junction bipolar transistor. According to the invention, the HBT comprises a semi-insulating InP substrate, a buffer layer on the substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter contact layer These layers are sequentially grown on the buffer layer. Since a pre-processing of forming two depressions in the sub-collector layer before growing the collector layer, the top surface of the emitter layer becomes planar surface. This results on the reduction of pits induced in the etching of the emitter contact layer, thus enhances the reliability and the high frequency performance of the HBT.
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