Semiconductor switches with evenly distributed fine control structures

摘要

Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor crystal for switching currents in at least one direction at higher to high voltages which are significantly higher than the operating voltages of gate circuits, comprising an active region and a termination portion, wherein at least one opposite surface of the active region is provided with fine structures distributed over a wide area, which structures are substantially uniformly configured and include one conductive terminal surface each, by which charge carriers can be moved in a controlled manner into the active region of the semiconductor crystal via the fine structures in order to control a concentration of the charge carriers in the active region and thus the off-state and/or on-state of the semiconductor switch.