METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH METAL GATE ELECTRODE

摘要

PURPOSE: A method for fabricating a semiconductor device with a metal gate electrode is provided to improve an operation speed by improving the quality of a gate oxide layer and controlling an increase of sheet resistance of a metal gate electrode, and to diversify a metal layer used as a gate electrode by preventing a metal layer inside the gate electrode from being oxidized in a subsequent heat treatment process or an oxide process. CONSTITUTION: The gate oxide layer is formed on a semiconductor substrate(21). A conductive stack layer including at least a metal layer is formed on the gate oxide layer. The stack layer is etched to form the gate electrode. A silicide layer(27) is formed on the sidewall of the gate electrode. A re-oxidation process is performed to recover the gate oxide layer damaged in etching the stack layer. A source/drain region is formed in the semiconductor substrate at both sides of the gate electrode.