Thermally stable ferroelectric memory

摘要

A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention. <IMAGE>