发明名称 METHOD FOR DEPOSITING SILICON DIOXIDE THIN FILM ONTO DIAMOND-LIKE CARBON AND ITS STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for depositing a silicon dioxide thin film onto diamond-like carbon by which the silicon dioxide thin film can be uniformly deposited onto the diamond-like carbon and also to provide its structure. <P>SOLUTION: In the method for depositing the silicon dioxide thin film onto the diamond-like carbon, a diamond-like carbon film 2 is deposited onto a substrate 1 by a CVD method and a silicon film 3 is deposited as a buffer layer onto the diamond-like carbon film 2 by a sputtering method and then the silicon dioxide thin film 4 is deposited onto the silicon film 3. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003342714(A) 申请公布日期 2003.12.03
申请号 JP20020147460 申请日期 2002.05.22
申请人 JAPAN SCIENCE & TECHNOLOGY CORP;MITSUMI ELECTRIC CO LTD 发明人 TOMOKAGE HAJIME;O SAIGEN;SAI KUMO;ISERI YOICHI
分类号 C03C17/34;C23C14/06;C23C16/26;C23C16/27;H01J9/02;H01L21/316;(IPC1-7):C23C14/06 主分类号 C03C17/34
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