发明名称 |
METHOD FOR DEPOSITING SILICON DIOXIDE THIN FILM ONTO DIAMOND-LIKE CARBON AND ITS STRUCTURE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for depositing a silicon dioxide thin film onto diamond-like carbon by which the silicon dioxide thin film can be uniformly deposited onto the diamond-like carbon and also to provide its structure. <P>SOLUTION: In the method for depositing the silicon dioxide thin film onto the diamond-like carbon, a diamond-like carbon film 2 is deposited onto a substrate 1 by a CVD method and a silicon film 3 is deposited as a buffer layer onto the diamond-like carbon film 2 by a sputtering method and then the silicon dioxide thin film 4 is deposited onto the silicon film 3. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2003342714(A) |
申请公布日期 |
2003.12.03 |
申请号 |
JP20020147460 |
申请日期 |
2002.05.22 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY CORP;MITSUMI ELECTRIC CO LTD |
发明人 |
TOMOKAGE HAJIME;O SAIGEN;SAI KUMO;ISERI YOICHI |
分类号 |
C03C17/34;C23C14/06;C23C16/26;C23C16/27;H01J9/02;H01L21/316;(IPC1-7):C23C14/06 |
主分类号 |
C03C17/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|