发明名称 |
Single mask trench fred with enlarged Schottky area |
摘要 |
A single mask process is described for making a trench type fast recovery process. The single mask defines slots in a photoresist for locally removing strips of nitride and oxide from atop silicon and for subsequently etching trenches in the silicon. A boron implant is carried out in the bottoms of the trenches to form local P/N junctions. The oxide beneath the nitride is then fully stripped in the active area and only partly stripped in the termination area in which the trenches are wider spaced than in the active area. Aluminum is then deposited atop the active area and in the trenches, but is blocked from contact with silicon in the active area by the remaining nitride layer.
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申请公布号 |
US6656843(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020132551 |
申请日期 |
2002.04.25 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BOL IGOR |
分类号 |
H01L21/285;H01L29/872;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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