| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory in which the number of erasure unit blocks to be batch-erased can be selected and controlled easily though constitution is comparatively simple, the number of selection of erasure unit blocks can be changed easily as necessary, and which can be realized comparatively inexpensively. <P>SOLUTION: This device is provided with a memory cell array sectioned into a plurality of erasure unit blocks 10 making the number of memory cells being erasable en bloc as a unit, a erasure unit block selection numbers control circuit 20 controlling so that combination of one erasure unit block or two erasure unit blocks or more to be erase en bloc out of the plurality of erasure unit blocks is selected based on the contents when an erasure block specifying signal is received, and an erasure voltage generating circuit supplying erasure voltage to an erasure unit block selected and controlled by the erasure unit block selection number control circuit. <P>COPYRIGHT: (C)2004,JPO</p> |
