| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a strap structure connected to a surface source electrode of a MOSFET element and, at the same time, to maintain the device internal resistance of the gate of the element at a low level. <P>SOLUTION: A semiconductor device is provided with a semiconductor chip 20 in which a semiconductor element having a surface source electrode 13 connected to a source diffusion layer 4 and a surface gate electrode 14 connected to gate polysilicon wiring 7a having a silicide layer 9 constituting at least part of its upper surface and the device internal resistance of a gate is lowered; a strap 16 ultrasonically connected to a lead frame mounted with the semiconductor chip 20 so that the strap 16 is connected electrically to the surface source electrode 13; and a wire 15 connected by electrical bonding to the lead section of the lead frame. <P>COPYRIGHT: (C)2004,JPO |
