发明名称 |
Semiconductor device, e.g. transistor or diode, has semiconductor zone(s) of semiconductor particles surface-modified with monomolecular ligand layer and contacts for injecting and extracting charge carriers into and from the zone |
摘要 |
Semiconductor device, has semiconductor zone(s) and first and second contacts respectively for injecting and extracting charge carriers into and from this zone. The zone consists of semiconductor particles surface-modified with a monomolecular layer of ligand. Independent claims are also included for the following: (1) printable formulation containing solvent and surface-modified semiconductor particles; and (2) production of a semiconductor device by preparing a substrate and printable formulation(s), printing the formulation(s) on the substrate to form a semiconductor zone and providing other structural elements to complete the device.
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申请公布号 |
DE10219120(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
DE20021019120 |
申请日期 |
2002.04.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HALIK, MARCUS;SCHMID, GUENTER;STEFFEN, KATJA;KLAUK, HAGEN |
分类号 |
H01L29/12;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/00 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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