发明名称 Semiconductor device, e.g. transistor or diode, has semiconductor zone(s) of semiconductor particles surface-modified with monomolecular ligand layer and contacts for injecting and extracting charge carriers into and from the zone
摘要 Semiconductor device, has semiconductor zone(s) and first and second contacts respectively for injecting and extracting charge carriers into and from this zone. The zone consists of semiconductor particles surface-modified with a monomolecular layer of ligand. Independent claims are also included for the following: (1) printable formulation containing solvent and surface-modified semiconductor particles; and (2) production of a semiconductor device by preparing a substrate and printable formulation(s), printing the formulation(s) on the substrate to form a semiconductor zone and providing other structural elements to complete the device.
申请公布号 DE10219120(A1) 申请公布日期 2003.11.20
申请号 DE20021019120 申请日期 2002.04.29
申请人 INFINEON TECHNOLOGIES AG 发明人 HALIK, MARCUS;SCHMID, GUENTER;STEFFEN, KATJA;KLAUK, HAGEN
分类号 H01L29/12;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/00 主分类号 H01L29/12
代理机构 代理人
主权项
地址