SEMICONDUCTOR MULTI-LAYERED STRUCTURE AND OPTICAL CONTROL ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an element structure which reduces the energy consumption of an optical control element using inter-subband transition up to a level adaptive to a large-capacity optical communication system.

SOLUTION: Disclosed are: a semiconductor multi-layered structure including as a basic constitutional element a quantum well structure which has a compound barrier layer in which an AlAs barrier layer of≥1 nm film thickness is arranged between an InGaAs well layer and an Al(Ga)AsSb barrier layer; and a semiconductor optical control element formed by arranging the semiconductor multi-layered structure on an InP substrate. By irradiating the multi- quantum well structure with a light resonating to the inter-subband transition energy of the conduction band of a multi-quantum well structure, and the absorption coefficient, refractive index, or optical gain to the light corresponding to energy of inter-subband transition are varied.

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