| 摘要 |
Problems caused by a nonuniform processing profile are avoided by altering the area to be processed so as to compensate for the processing profile. More specifically, with regard to etching, problems caused by a nonuniform etch profile can be avoided by altering the mask employed in specifying the etch area so as to compensate for the etch profile. Nonuniform parameters of interest of structures which result from a nonuniform etch profile during the etching of a mask in which all the structures were identical can be avoided for by altering the mask employed in specifying the etch area so as to compensate for the etch profile. The mask is changed in a manner that is inversely proportional to the etch profile for each particular structure characteristic that determines the parameter of interest for which uniformity is desired.
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