发明名称 |
METHOD FOR MAKING THIN-FILM SEMICONDUCTORS BASED ON I-III-VILESS THANSBGREATER THAN2LESS THAN/SBGREATER THAN COMPOUNDS, FOR PHOTOVOLTAIC APPLICATIONS |
摘要 |
<p>The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe<SUB>2</SUB>; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.</p> |
申请公布号 |
AU2003246852(A1) |
申请公布日期 |
2003.11.17 |
申请号 |
AU20030246852 |
申请日期 |
2003.04.23 |
申请人 |
ELECTRICITE DE FRANCE SERVICE NATIONAL |
发明人 |
MOEZ BEN-FARAH;DANIEL LINCOT;JEAN-FRANCOIS GUILLEMOLES;PIERRE, PHILIPPE GRAND;PIERRE COWACHE;JACQUES VEDEL;STEPHANE TAUNIER;OLIVIER KERREC;MICHEL MAHE;DENIS GUIMARD |
分类号 |
C25D5/50;C25D7/00;H01L31/032;H01L31/04;H01L31/18;(IPC1-7):H01L31/032 |
主分类号 |
C25D5/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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