| 发明名称 |
Semiconductor device and method for manufacturing |
| 摘要 |
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
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| 申请公布号 |
US2003211713(A1) |
申请公布日期 |
2003.11.13 |
| 申请号 |
US20030406281 |
申请日期 |
2003.04.04 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI;MIYANO KIYOTAKA;MIZUSHIMA ICHIRO;TSUNASHIMA YOSHITAKA;HIRAOKA TAKAYUKI;AKASAKA YASUSHI;ARIKADO TSUNETOSHI |
| 分类号 |
H01L21/28;H01L21/336;H01L21/762;H01L21/8234;H01L29/51;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
H01L21/28 |
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