READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICES

摘要

FIELD: electrically addressed nonvolatile read-only memory. SUBSTANCE: electrically addressed nonvolatile read-only memory that provides for multilayer coding of desired locations or their addresses has set of memory locations, passive matrix incorporating parallel electrodes, vertical and horizontal buses, semiconductor material, and insulating material. Read-only memory device has one or more electrically addressed nonvolatile read-only memories, as well as master and control circuits. EFFECT: provision for developing three-dimensional memory device. 26 cl, 16 dwg