| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high source withstand voltage and high performance and reliability and a liquid jet apparatus. SOLUTION: This semiconductor device has switch elements (41) for flowing currents through a load (43), and circuits (42, 44, 45, 46, 49, 52, 54, and 55) for driving the switch elements (41) respectively formed on the same substrate (1). The circuits (42, 44, 45, and 46) are provided with a source follower transistor (2) for generating a drive voltage (VHT) to be applied to the control electrode of the switch element (41), and a source (s) of the source follower transistor (42) has a first doped region (17) connected to a source electrode and second doped regions (19, 119, and 62A) forming PN junction with the semiconductor region (1) for providing a channel, and having impurity concentration lower than that of the first dopes areas (17, 60). COPYRIGHT: (C)2004,JPO
|
