Silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation

摘要

A method to form a SCR device in the manufacture of an integrated circuit device is achieved. The method comprises providing a SOI substrate comprising a silicon layer overlying a buried oxide layer. The silicon layer further comprises a first well of a first type and a second well of a second type. A first heavily doped region of the first type is formed in the second well to form an anode terminal. A second heavily doped region of the second type is formed in the first well to form a cathode terminal and to complete the SCR device. A gate isolation method is described. A salicide method is described. LVT-SCR methods, including a floating-well, LVT-SCR method, are described.