Production of a boron-doped silicon wafer comprises cutting a boron-doped silicon crystal into wafers, mechanically shaping, wet chemical etching, and polishing by continuously introducing a silicic acid-containing aqueous polishing agent

摘要

Production of a boron-doped silicon wafer comprises cutting a boron-doped silicon crystal into wafers, mechanically shaping, wet chemical etching a front side and a rear side to remove at least 10 mum silicon, and polishing at least one front side by continuously introducing a silicic acid-containing aqueous polishing agent containing less than 0.1 wt.% alkali metal ions and less than 0.1 wt.% amine compounds to remove at least 10 mum silicon.