| 摘要 |
PURPOSE:To provide a thin film transistor having a highly reliable gate film which is hardly affected by charge-up phenomenon, plasma damage, static electricity, etc., during a manufacturing process, a packaging process, actual use, etc. CONSTITUTION:The title device is a polycrystalline silicon thin film P-channel MOS transistor which is comprised of a polycrystalline silicon film 10 forming a bulk layer formed by interposing an N<+>-type polycrystalline silicon film 7 forming a gate electrode and a silicon dioxide film 8 forming a gate film thereon and a P<+>-type polycrystalline silicon film 11 forming a source/drain region formed at both sides thereof. A through-hole 9 is provided to one region excepting a region wherein the N<+>-type polycrystalline silicon film 7 of the silicon dioxide film 8 is formed. The P<+>-type polycrystalline silicon film 11 forming a wiring layer formed by the same layer formation as the polycrystalline silicon film 10 is connected to a P<+>-type diffusion layer 5 which is formed inside an N-type well 2 inside an N-type silicon substrate 1 through the through-hole 9. |
