发明名称 |
CCD wafers with titanium refractory metal |
摘要 |
In order to make a charge couple device including an interconnect layer to contact active areas, a first layer of a first titanium nitride layer on the active areas, and then a series of alternating titanium and titanium nitride layers are deposited to form a composite sandwich structure. This structure is less prone flaking while able to withstand high temperature treatment during fabrication of backside illuminated sensors to improve quantum efficiency and reduce dark current.
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申请公布号 |
US2003197209(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030435043 |
申请日期 |
2003.05.12 |
申请人 |
GROULX ROBERT;FROST RAYMOND;TREMBLAY YVES |
发明人 |
GROULX ROBERT;FROST RAYMOND;TREMBLAY YVES |
分类号 |
H01L21/3205;H01L21/768;H01L23/532;H01L27/148;H01L31/0264;H01L31/18;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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