发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a semiconductor device (10), plural diffusion layer areas (2, 3) are formed so that the impurity concentration of the diffusion layer area (2) is set to be higher than that of the diffusion layer area (3), and a first contact wire (4) connected to the diffusion layer area (2) having the higher impurity concentration is set to be larger in sectional area than a second contact wire (5) connected to the diffusion layer area (3) having the lower impurity concentration. |
申请公布号 |
US2003197274(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030424068 |
申请日期 |
2003.04.28 |
申请人 |
NEC CORPORATION;NEC ELECTRONICS CORPORATION |
发明人 |
MANABE KAZUTAKA |
分类号 |
H01L21/768;H01L21/28;H01L21/336;H01L21/60;H01L21/8238;H01L23/485;H01L27/092;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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