Semiconductor arrangement for switching inductive loads such as motor, has Schottky diode that is formed by Schottky contact between source electrode and drift zone of semiconductor surface

摘要

The arrangement has a gate electrode (40) arranged in a trench extending in vertical direction of semiconductor surface (100). The gate electrode is insulated from the semiconductor surface and a source electrode (60). A Schottky diode connected in parallel with a drain-source path of the MOS transistor, is formed by the Schottky contact between source electrode and drift zone (12) of semiconductor surface.