| 发明名称 |
Method of fabricating borderless contact using graded-stair etch stop layers |
| 摘要 |
The invention teaches the creation of borderless contact holes by using multiple layers of overlying dielectric, having different, interdependent etch rates, that function as etch stop layers for the creation of the borderless contact holes through a layer of overlying dielectric.
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| 申请公布号 |
US6635576(B1) |
申请公布日期 |
2003.10.21 |
| 申请号 |
US20010999343 |
申请日期 |
2001.12.03 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIU MENG-CHANG;WU LIN-JUNE;LIN KWANG-MING |
| 分类号 |
H01L21/302;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
| 代理机构 |
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