| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance conversion efficiency of a thin film photoelectric converter by absorbing light incident to the photoelectric converter effectively therein using a light scattering layer. <P>SOLUTION: The thin film photoelectric converter comprises a first electrode layer (transparent electrode) 2, at least one silicon based photoelectric conversion unit 10, and a second electrode layer (back electrode) deposited sequentially on a transparent substrate 1 wherein the second electrode layer comprises a light scattering layer 3 consisting of transparent conductive layers 3a and 3c and a transparent insulation layer 3b, and a light reflective metal layer 4. The light scattering layer 3 has a thickness in the range of 30-150 nm and the insulating thin film 3b is interposed with surface coverage of 30-70%. <P>COPYRIGHT: (C)2004,JPO |
