| 摘要 |
<p>PURPOSE:To obtain a photoconductor, resolution and sensitivity thereof are high and dark currents therefrom are small, by laminating an amorphous hydrogenated Si layer containing a large amount of hydrogen and an amorphous hydrogenated Si layer containing a small amount of hydrogen on an Si substrate through an Mo film and growing them and coating the surface with an SiO2 film by anodic oxidation. CONSTITUTION:An Mo film 12 is formed on a single crystal Si substrate 11 through a sputtering method and the substrate is entered into a magnetron sputtering device, and the inside of the device is evacuated up to 2X10<-6>Torr, the substrate 11 is kept at approximately 250 deg.C, polycrystalline Si is used as a target and an amorphous hydrogenated Si layer 13 containing a large amount of hydrogen is deposited first while bringing the pressure of Ar to 4.5X10<-3>Torr and the pressure of H2 to 5X10<-4>Torr. An amorphous hydrogenated Si layer 14 containing a small amount of hydrogen is laminated through the same method, and an SiO2 film 15 is formed on the surface of the layer 14 through anodic oxidation in oxygen plasma. A transparent electrode 16 consisting of In2O3 is formed on the film 15, and the electrode 16 is brought to negative polarity and the Mo film 12 to positive polarity and voltage is applied.</p> |
