发明名称 |
Thin film magnetic memory device provided with a dummy cell for data read reference |
摘要 |
Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a differential amplifier. An offset corresponding to a voltage difference between first and second offset control voltages applied from voltage generating circuits are provided between passing currents of the first and second data lines, and a reference current passing through the dummy cell is set to a level intermediate between two kinds of levels corresponding to storage data of a data read current passing through the selected memory cell. |
申请公布号 |
US2003189853(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20020260397 |
申请日期 |
2002.10.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA, MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED |
发明人 |
TANIZAKI HIROAKI;HIDAKA HIDETO;TSUJI TAKAHARU;OOISHI TSUKASA |
分类号 |
G11C11/15;G11C7/06;G11C7/14;G11C11/408;G11C11/4091;G11C11/4099;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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