| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a photoelectric conversion element with highly bright emitted light. <P>SOLUTION: The manufacturing method for a photoelectric conversion element uses semiconductor crystals of II-VI groups as a substrate. The method includes, in the step of forming a second electrically conductive thin film on the surface of the first electrically conductive substrate, at least a step of performing p-n junction through doping both the element that makes the semiconductor the first electrically conductive one and the element that makes the semiconductor the second electrically conductive one, thus forming the first electrically conductive thin film. <P>COPYRIGHT: (C)2004,JPO |
