发明名称 |
HIGH-PRESSURE SUBSTRATE TREATING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a high-pressure substrate treating apparatus that is small- sized and capable of performing a series of substrate treatments from development to drying with a superior throughput and at a low cost. SOLUTION: An upper lid 13 can be moved in the upward and downward directions to a vessel body 12. When the upper lid 13 is raised, the upper lid 13 separates from the vessel body 12 upwardly to permit a substrate W to be conveyed in/from a spin chuck 41. Moreover, a developing nozzle 61 can move between the exterior of a pressure vessel 1 and the upper location of the substrate W that is held by the spin chuck 41 in this separated state. The developing nozzle 61 discharges a developer toward the surface of the substrate W from the tip of the nozzle while moving to the upper location of the substrate W so as to carry out development to the substrate W. The upper lid 13 is lowered to contact with the vessel body 12, and thereby a treatment chamber 11 is formed. By introducing an SCF there, high-pressure drying treatment to the substrate W is carried out. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003282408(A) |
申请公布日期 |
2003.10.03 |
申请号 |
JP20020083041 |
申请日期 |
2002.03.25 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
KITAKADO RYUJI;MURAOKA YUSUKE;SAITO KIMITSUGU;IWATA TOMOMI;MIYAKE TAKASHI;MIZOBATA IKUO |
分类号 |
G03F7/30;F26B5/00;H01L21/027;H01L21/304;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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