| 摘要 |
A ferroelectric memory that can hold multinary storage with almost no change in a circuit of the prior art. Multinary storage is performed by changing the time, during which the write pulse is applied, according to a value to be stored. Only one voltage need be prepared for the write pulse. By setting the voltage for resetting or reading pulse to the same as the voltage for writing, it is possible to provide ferroelectric memories having the multinary function with only one voltage source.
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