| 摘要 |
In a process of producing low k inter-layer dielectric film in an interconnect structure on a semiconductor body, the improvement of preventing resist poisoning effects, comprising: a) providing an interconnect structure comprising a substrate and metal line on a semiconductor body; b) depositing an antireflective (ARC) coating layer over the substrate and metal line; c) depositing a Si-containing resist coating on the ARC layer; d) affecting photolithography to provide a contact hole in the Si-containing resist coating; e) affecting sylilation to obtain a Si-rich film by increasing Si content in the resist coating; f) subjecting the Si-rich film to oxidation to convert it to a low k oxide porous dielectric film; and g) affecting an ARC opening by removing the ARC coating in the contact hole.
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