| 摘要 |
PURPOSE: A GaN based optical device having an anti-reflective coating and a method for manufacturing the same are provided to be capable of improving the emission of light and increasing processing yield. CONSTITUTION: A GaN based optical device is provided with a substrate(11), an N-type GaN layer(15) formed at the upper portion of the substrate, an active layer(19) made of an InGaN layer, formed at the upper portion of the N-type GaN layer, a P-type GaN layer(23) formed at the upper portion of the active layer, an N-type electrode(25) and a P-type electrode(27) formed on the upper portion of the N-type GaN layer and the P-type GaN layer, respectively, and an anti-reflective coating(31) formed at the upper portion of the resultant structure for preventing the light emitted out of the active layer from being reflected. |
