| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chip type semiconductor element capable of ensuring the wettability of the solder of a gate electrode even in a bonding processing temperature which is 630°C or more, and reducing the deterioration of a withstand voltage by suppressing the diffusion of aluminum as much as possible. <P>SOLUTION: This chip type semiconductor element and a method for manufacturing the chip type semiconductor element are provided to form a gate electrode constituted of four layers of a Ti film and an Al film or Al-Si alloy film and an Mo film and an Ni film and a main electrode constituted of two layers of a Ti film and an Al film or an Al-Si alloy film on one side of a semiconductor element, and to form a main electrode constituted of two layers of a Ti film and an Al film or an Al-Si alloy film on the opposite face, and to bond a thermal stress buffer plate through an Al-Si alloy plate to the both main electrodes. <P>COPYRIGHT: (C)2003,JPO</p> |
