| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device together with a dry etching apparatus in which etching is performed with an optimum gas composition in accordance with a film composition for good worked form. SOLUTION: In a dry etching process, a film to be etched that mainly comprises a silicon oxide film is made to react with an etching gas containing phlorocarbon gas so that phlorocarbon desorbed material is volatilized to work with the film to be etched. The ratio between fluorine quantity and carbon quantity in an etching gas is optimized for dry etching according to composition of the film to be etched so that the average composition of the phlorocarbon desorbed material comes to be a prescribed desorbed material composition (for example CF<SB>2</SB>) in accordance with ion energy. COPYRIGHT: (C)2003,JPO
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