METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to easily recognize an align pattern irrespective of over polishing by forming a global align pattern on a filed region. CONSTITUTION: After sequentially forming an oxide layer(110a) and an interlayer dielectric(120a) on a semiconductor substrate(100), a contact is formed by patterning the interlayer dielectric and the oxide layer using a photoresist pattern as a mask. A tungsten film(150a) is formed on the resultant structure including the contact. The tungsten film(150a) is planarized to expose the surface of the interlayer dielectric(120a). A conductive layer(160) is formed on the tungsten film and the exposed interlayer dielectric.