| 摘要 |
A plurality of nearly-parallel grooves 2 are formed on a first main surface 24a of a semiconductor single crystal substrate 24, and a metal electrode 6 for extracting cell is formed on the inner side face of each groove 2, which is used as an electrode-forming area, on one side as viewed in the width-wise direction of the groove. After a metal-containing underlying layer 49 is formed on the electrode-forming area, a main electrode metal layer 50 containing at least any one of an electroless-plated layer, electroplated layer and hot-dipped layer is formed on the metal-containing underlying layer 49. <IMAGE>
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