发明名称 |
Resist pattern swelling material, and method for patterning using same |
摘要 |
To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
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申请公布号 |
US2003175624(A1) |
申请公布日期 |
2003.09.18 |
申请号 |
US20030408735 |
申请日期 |
2003.04.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOZAKI KOJI;KOZAWA MIWA;NAMIKI TAKAHISA;KON JUNICHI;YANO EI |
分类号 |
G03F7/00;G03F7/004;G03F7/40;H01L21/027;H01L21/311;H01L21/8247;H01L27/105;(IPC1-7):G03F7/20;G03F7/38;H01L21/302;H01L21/461 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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