发明名称 Datenleitungsstörungsfreier, in Speicherblöcke geteilter Flashspeicher und Mikrorechner mit Flashspeicher
摘要 A semiconductor integrated circuit device comprises a central processing unit (CPU), a first external terminal (EA0-EA16), and an electrically erasable and programmable nonvolatile flash memory (FMRY), wherein the semiconductor integrated circuit has a first operation mode in which the flash memory receives an address signal from the central processing unit executing a control program to erase and write data from and into the flash memory, and wherein the semiconductor integrated circuit has a second operation mode in which the flash memory receives an address signal on the external terminal to write data supplied from the outside of the semiconductor integrated circuit device into the flash memory. <IMAGE>
申请公布号 DE69333151(D1) 申请公布日期 2003.09.18
申请号 DE1993633151 申请日期 1993.03.11
申请人 HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 MATSUBARA, KIYOSHI;YASHIKI, NAOKI;BABA, SHIRO;ITO, TAKASHI;MUKAI, HIROFUMI;SATO, MASANAO;TERASAWA, MASAAKI;KURODA, KENICHI;SHIBA, KAZUYOSHI
分类号 G06F9/445;G06F15/78;G11C7/10;G11C16/04;G11C16/10;G11C16/16;G11C16/26;G11C16/30;H01L21/8247;H01L27/105;H01L27/115;(IPC1-7):G11C16/06 主分类号 G06F9/445
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