METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to shorten process time and to reduce process temperature by using ion-implantation instead of polysilicon doping. CONSTITUTION: A gate oxide layer(2) is formed on a semiconductor substrate(1). A SixNyOz layer(3) is formed by nitridation processing of the gate oxide layer, and a polysilicon layer(4) is continuously deposited on the resultant structure. Desired dopants are implanted into the polysilicon layer. Oxidation or annealing process is performed to stabilize and activate the dopants.