| 摘要 |
<p>A family of emitter turn-off thyristors compres a gate turn-on (GTO) thyristor (GTO), a first switch (S11~S1m), the drain of the first switch being connected to the cathode of the GTO thyristor, and a second switch (S21~S2m) connected between the gate of the GTO thyristor and the source of the first switch. The first switch consists of a number of paralleled metal oxide semiconductor field effect transistors (MOSFETs). The anode of the GTO thyristor and the source of the first switch serve as the anode (ANODE) and the cathode (KATHODE1), respective, of the emitter turn-off thyristor. The emitter turn-off thyristor has four control electrodes; the gate of the GTO thyristor (GATE1), the control electrode of the second switch (GATE3), the gate of the first switch (GATE2), and the cathode of the GTO thyristor (KATHODE2)</p> |
