| 摘要 |
A method for analyzing the crystal structure of a silicon wafer is provided to measure crystal uniformity of a silicon wafer precisely by analyzing the size and shape of a grin formed in a silicon wafer precisely. A Nd:YV04 laser beam used as an excitation source passes through a bandpass filter of a photoliminescence apparatus so that the laser beam is transformed into a laser beam having a wavelength of a band irradiated to a silicon wafer. The transformed laser beam is irradiated to the silicon wafer while the output intensity of the irradiated laser beam is detected by a photo detector of the photoluminescence apparatus. The output intensity of the laser beam detected from the photo detector is converted into a digital signal to be displayed as a peak type so that the entire crystal structure of the silicon wafer is mapped by using the digital signal while using a band edge filter functioning to make the range of a peak narrow with respect to a maximum peak intensity among the peaks. The transformed laser beam can be the silicon wafer by using power of 0.1-10 milliwatts.
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