ALTERNATING PHASE SHIFT MASK

摘要

A photoresist mask (30) used in the fabrication of an integrated circuit is described. This mask (30) can include a first portion (32) having a phase characteristic; a second portion (32) being located proximate the first portion (32) and having the same phase characteristic as the first portion (32); and a segment (38) disposed between the first portion (32) and the second portion (34) to prevent phase conflict between the first portion (32) and the second portion (34).