METHOD OF FORMING DIFFERENT SILICIDE PORTIONS ON DIFFERENT SILICON-CONTAINING REGIONS IN A SEMICONDUCTOR DEVICE

摘要

A method is disclosed in which different metal layers 240, 242 are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers 240, 242 may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions 241, 243 may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may significantly be improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions 241, 243, wherein at least one silicide portion comprises noble metal.