发明名称 |
Method for removing Si-needles of wafer |
摘要 |
This application is about a method for removing the deep trench Si-needles on a wafer. The method includes steps of forming a photoresist layer on a frontside surface of the wafer, removing a specific area of the photoresist layer for exposing the Si-needles, proceeding a first etching and a second etching, and finally removing the photoresist layer on the frontside surface of the wafer. The first etching is a wet etching for removing the Si-needles by an etching solution etching from a backside surface of the wafer back to the frontside surface of the wafer. And, the second etching is a dry etching for removing the residual silicon nitride (SiN) slices formed during the first etching.
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申请公布号 |
US2003170997(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20020335294 |
申请日期 |
2002.12.31 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
NI CHIH-JUNG;JAN JIA-SHING;LIU YUEH-LIANG |
分类号 |
H01L21/02;H01L21/302;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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