发明名称 A magnetic storage device
摘要 A synthetic ferrimagnet reference layer (14) for a magnetic storage device has first and second layers (50, 52) of magnetic material operable to be magnetized in first and second magnetic orientations. A spacer layer (54) between the layers of magnetic material (50, 52) is of suitable dimensions to magnetically couple the magnetic layers (50, 52) in opposite directions. The layers of magnetic material (50, 52) have substantially the same coercivities. <IMAGE>A synthetic ferrimagnet reference layer (14) for a magnetic storage device has first and second layers (50, 52) of magnetic material operable to be magnetized in first and second magnetic orientations. A spacer layer (54) between the layers of magnetic material (50, 52) is of suitable dimensions to magnetically couple the magnetic layers (50, 52) in opposite directions. The layers of magnetic material (50, 52) have substantially the same coercivities. <IMAGE>
申请公布号 EP1343170(A2) 申请公布日期 2003.09.10
申请号 EP20030251202 申请日期 2003.02.27
申请人 HEWLETT-PACKARD COMPANY 发明人 SHARMA, MANISH;TRAN, LUNG THE
分类号 G11C11/15;H01F10/32;(IPC1-7):G11C11/16 主分类号 G11C11/15
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