| 发明名称 |
SILVER-SELENIDE/CHALCOGENIDE GLASS STACK FOR RESISTANCE VARIABLE MEMORY |
| 摘要 |
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge<SUB>x</SUB>Se<SUB>100-x </SUB>composition. |
| 申请公布号 |
AU2003217405(A1) |
申请公布日期 |
2003.09.09 |
| 申请号 |
AU20030217405 |
申请日期 |
2003.02.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KRISTY, A. CAMPBELL;JOHN MOORE |
| 分类号 |
H01L27/105;G11C11/34;G11C13/02;H01L21/20;H01L27/10;H01L27/148;H01L27/24;H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
H01L27/105 |
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