| 摘要 |
The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.
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